Beijing - Chinese researchers have discovered a new mechanism to develop non-volatile memory devices with the speed of UltraHigh, the Institute of Physics, the Chinese Academy of Science, said on Tuesday.

The development of high performance memory The devices have played a key role in modern electronic Innovation. Non-volatile memory devices, including read-only memory (ROM) and flash memory, have high capacity and mechanical reliability. But its performance has been hampered by a low proportion of extinction and low operating speed.

A research team of the Physics Institute developed non-volatile floating gateway devices with UltraHigh speed, Van der Waals-based heteroltructures with atomically sharp interfaces between different functional elements, with an extinction relationship up to 10 billion.

Said memory devices can achieve reading and writing operations within the range of 20 nanoseconds, and keep the data for at least ten years. Current commercial flash memory devices read and write data within the range of 100 microseconds, or 100,000 nanoseconds.

van der waals heteroltructures are stacking different materials in layers, and can be used in research fields ranging from the materials. Science to electrochemistry.

Research, funded by the National Foundation of Natural Sciences of China, Ministry of Science and Technology, and CAS, was published online in the journal Nature Nanotechnology on Monday.

Beijing  Innovation 

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